unisonic technologies co., ltd 2sd2470 npn silicon transistor www.unisonic.com.tw 1 of 3 copyright ? 2015 unisonic technologies co., ltd qw-r216-003.i strobo and dc/dc converters ? features * low saturation voltage v= 0.25v(typ) at i c /i b = 3a/0.1a * collector current of 5a is possible ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 - 2SD2470G-X-AB3-R sot-89 b c e tape reel 2sd2470l-x-t9s-b 2sd2470g-x-t9s-b to-92sp e c b tape box 2sd2470l-x-t9s-k 2sd2470g-x-t9s-k to-92sp e c b bulk note: pin assignment: e: emitter c: collector b: base ? marking sot-89 to-92sp utc sd2470 1 data code l: lead free g: halogen free
2sd2470 npn silicon transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r216-003.i ? absolute maximum rating (t a =25 c, unless otherwise noted) parameter symbol ratings unit collector-base voltage v cbo 15 v collector-emitter voltage v ceo 10 v emitter-base voltage v ebo 10 v collector current (dc) i c 5 a collector current (pulse) (note 2) i cp 8 a collector power dissipation sot-89 p c 0.5 w to-92sp 0.4 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. single pulse =10ms ? electrical characteristics (t a =25 c, unless otherwise specified) parameter symbol test conditions min typ max unit collector base breakdown voltage bv cbo i c = 50 a 15 v collector emitter breakdown voltage bv ceo i c = 1ma 10 v emitter base breakdown voltage bv ebo i e =50 a 10 v collector cut-off current i cbo v cb =10v, i e =0 0.1 a emitter cut-off current i ebo v eb = 8v, i c =0 0.5 a dc current gain h fe v ce = 2v, i c = 2a 270 820 collector-emitter satu ration voltage v ce ( sat ) i c /i b =3a /0.1a 0.25 0.5 v transition frequency f t v ce =6v, i e =0.05a, f=100mhz 170 mhz output capacitance c ob v cb = 10v, i e = 0 a, f=1mhz 30 pf ? classification of h fe rank s e range 270~560 450~820
2sd2470 npn silicon transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r216-003.i ? typical characteristics 1 10m 100m 1 i c (a) v ce(sat) vs. i c 10 100 10 1000 i c /i b =30 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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